1) A solid state device is a) an electrical component or system that is based largely or entirely on a semiconductor b) a resistor c) a vacuum tube 2) A solid state device has replaced: a) semiconductors b) transistors and diodes c) vacuum tube technology 3) The use of solid state devices a) is more expensive than the technology of the past, but very useful b) is less expensive, more reliable, smaller, and sturdier than the vacuum tube technology’s devices c) have no use in nowadays 4) The key to the operation of the solid state devices is/are a) the insulators b) the conductors c) the semiconductors 5) Which list contains only solid state devices? a) resistor, diode, inductor b) diode, transistor, inductor, capacitor c) diode, transistor, LED 6) What best describes solid-state devices? a) Electronic devices that utilize the movement of electrons through a vacuum. b) Mechanical devices that rely on the physical motion of gears and levers. c) Electronic devices that operate using semiconductor materials and have no moving parts. 7) In series diode’s connection a) provides a constant dc voltage across the diode’s combination b) increases the current carrying capability c) decreases the reverse blocking ability of this part of the circuit 8) The more diodes we connect in series, a) the higher forward current we achieve (we get) b) the higher voltages we block c) the lower voltages we block 9) In series connection of diodes a) creates a voltage regulator b) creates a lower voltage blocking combination c) creates a voltage divider 10) In parallel way diode’s connection a) provides a constant dc voltage across the diode’s combination b) increases the current carrying capability c) decreases the reverse blocking ability of this part of the circuit 11) The more diodes we connect in parallel way, a) the higher forward current we achieve (we get) b) the lower forward current we achieve (we get) c) the lower voltages we block 12) When comparing diode qualities in series and in parallel, which statement is true? a) When diodes are connected in series, the forward voltage drops add up, while in parallel, the forward current ratings add up. b) When diodes are connected in series, the forward current ratings add up, while in parallel, the forward voltage drops add up. c) When diodes are connected in series, both the forward voltage drops and forward current ratings add up, while in parallel, both values remain the same. 13) The boundary between p-type material and n-type material is called a) PN JUNCTION b) NP JUNCTION c) PNP JUNCTION 14) The barrier between the p-type material and n-type material of a diode is called a) potential or voltage barrier b) current barrier c) electrical barrier 15) The barrier voltage for silicon is a) 0,7 V b) 0.3 V c) 0.1 V 16) The barrier voltage for germanium diodes is a) 0,7 V b) 0.3 V c) 0.1 V 17) Dopping is the process when a) in an insulator we add external special atoms or compounds in order to create a semiconductor b) in an insulator we add only electrons in order to create a semiconductor c) in an insulator we add only protons in order to create a semiconductor 18) In a P-N junction diode a) the P-side has an excess electrons (which means more electrons) and the N-side has an excess of holes (which means more holes) b) b.We do not have an excess of holes or electrons in any side of the junction c) c.the P-side has an excess holes (which means more holes) and the N-side has an excess of electrons(which means more electrones) 19) Unbiased diode means that: a) no external voltage is applied b) external voltage over the potential barrier is applied c) the diode is in reversed bias 20) A P - type material can be used as an anode and could be Silicon a) doped by a 3 valence electron atom such as Gallium and Indium b) doped by a 5 valence electron atom such as Arsenic and Phosphorus c) doped by protons 21) An N - type material can be used as a cathode and could be Silicon a) doped by a 3 valence electron atom such as Gallium and Indium b) doped by a 5 valence electron atom such as Arsenic and Phosphorus c) doped by electrons 22) Which statement accurately defines 'P' (anode) and 'N' (cathode) type materials in relation to diodes? a) 'P' type material is doped with an impurity that creates an excess of electrons, while 'N' type material is doped with an impurity that creates a deficit of electrons. b) 'P' type material is doped with an impurity that creates a deficit of electrons, while 'N' type material is doped with an impurity that creates an excess of electrons. c) Both 'P' type material and 'N' type material are doped with the same type of impurity, but the concentration of impurities differs. 23) In a PN junction, in the depletion zone, when a diode is forward biased a) the electrons from the N - Type material flow across into the P - Type material b) b.the holes from the N - Type material flow across into the P - Type material c) c.a negative voltage is applied to the P -Type material and a positive to the N - Type material. 24) In a PN junction, in the depletion zone, when a diode is forward biased a) a negative voltage is applied to the P -Type material and a positive to the N - Type material. b) a positive voltage is applied to the P -Type material and a negative to the N - Type material. c) a positive voltage is applied to the P -Type material and a positive to the N - Type material. 25) In a PN junction, in the depletion zone, when a diode is reverse biased a) the electrons from the N - Type material flow across into the P - Type material b) the holes from the N - Type material flow across into the P - Type material c) a negative voltage is applied to the P -Type material and a positive to the N - Type material. 26) In a PN junction, in the depletion zone, when a diode is reverse biased a) the electrons from the N - Type material flow across into the P - Type material b) we have no current flow c) a negative voltage is applied to the P -Type material and a positive to the N - Type material. 27) When AC current is applied to a semiconductor diode, a) current flows during one cycle of the sine wave but not during the other cycle b) current flows always c) the diode blocks the current 28) A Peak Inverse Voltage is: a) the maximum inverse voltage drop across the diode at the indicated forward current. b) the maximum reverse operating voltage that can be applied across the diode without breakdown and damage occurring (happen to the device) to the device. c) is the voltage to apply to the diode in order to conduct electrical current 29) Leakage current is: a) the maximum inverse current across the diode without the destruction of it b) a high value direct current that flows, when a semiconductor diode is in reverse bias mode and is below the peak inverse voltage applied c) the very small value of direct current that flows, when a semiconductor diode is in reverse bias mode and is below the peak inverse voltage applied 30) Which of the following statements accurately describes the operation and characteristics of semiconductor devices? a) Semiconductor devices utilize the flow of electrons in a vacuum to perform electronic functions and exhibit a linear relationship between voltage and current. b) Semiconductor devices operate by controlling the flow of charge carriers through a semiconductor material, and they exhibit nonlinear current-voltage characteristics. c) Semiconductor devices rely on mechanical components such as gears and levers to perform their functions and exhibit a linear relationship between voltage and current. 31) Choose the sentences that are scientifically correct. a) Semiconductor diodes have properties that enable them to perform many different electronic functions. (T-F) b) To do their jobs, engineers and technicians use mostly vacuum tube technology. (T-F) c) Numerous avionics displays and indicators use LEDs for indicator lights, digital readouts, and backlighting of liquid crystal display (LCD) screens. (T-F) d) LEDs are constructed of non-semiconductor material. (T-F) 32) Choose the right answer for the circuit a) it is a positive clipper b) it is a negative clipper c) it works in both ways (positive and negative clipper) d) a 33) A half - wave rectifier circuit is a circuit where a) When AC current is applied to a diode, we have current flow, during the half of the period of the sine wave b) When AC current is applied to a diode, we always have current flow c) When DC current is applied to the diode we do not have electrical current 34) A full - wave rectifier circuit is a circuit where a) When AC voltage is applied, we have AC current flow b) When AC voltage is applied, we have DC current flow without time interruption c) When DC current is applied we do not have electrical current 35) A bridge rectifier circuit advantage is that a) the entire applied AC voltage is used resulting in a non-interrupted DC pulse voltage at the output ready to be filtered to pure DC. b) the entire applied AC voltage is used resulting in an interrupted DC pulse voltage at the output ready to be filtered to pure DC. c) When DC current is applied we get an AC current output 36) Which of the following statements accurately characterizes diode parameters and the operation and function of diodes in a range of circuits? a) Diode parameters include forward voltage drop, reverse breakdown voltage, and current gain. Diodes function as current amplifiers in various circuits. b) Diode parameters include forward voltage drop, reverse leakage current, and maximum forward current rating. Diodes function as one-way valves for current flow in circuits. c) Diode parameters include capacitance, inductance, and resistance. Diodes function as voltage regulators in different circuit configurations.

OUTCOME 1 DIODES

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